The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Dec. 18, 2013
Applicant:

GE Energy Power Conversion Gmbh, Berlin, DE;

Inventors:

Roland Jakob, Berlin, DE;

Piotr Sadowski, Berlin, DE;

Thomas Bruckner, Munich, DE;

Thomas Basler, Chemnitz, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/16 (2006.01); H02M 7/219 (2006.01); H02M 1/32 (2007.01); H02M 7/797 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H02M 7/219 (2013.01); H02M 1/32 (2013.01); H02M 7/797 (2013.01); H02M 1/08 (2013.01);
Abstract

A method for operating an electrical power rectifier. The power rectifier comprises at least two branches that are connected in parallel to each other, each of the branches comprising at least two power semiconductor elements that are connected in series. The collector-emitter voltage Vce(t) and/or the collector current Ic(t) of one of the power semiconductor elements is detected by means of the method. Furthermore, it is determined whether at least one of the following conditions is met: dVce(t)/dt<(dVce/dt), and/or dIc(t)/dt<(dIc/dt), and or Ic(t_ent)<Ic. If at least one of the aforementioned conditions has been met, the gate-emitter voltage of at least one of the power semiconductor elements is increased.


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