The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Apr. 16, 2015
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventor:
Toru Takayama, Nara, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/343 (2006.01); H01S 5/323 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01); H01S 5/223 (2006.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/0206 (2013.01); H01S 5/22 (2013.01); H01S 5/3013 (2013.01); H01S 5/32341 (2013.01); H01S 5/3407 (2013.01); H01S 5/2231 (2013.01); H01S 5/3213 (2013.01); H01S 2301/173 (2013.01);
Abstract
A semiconductor light emitting element includes a substrate including GaN, a first cladding layer provided over the substrate, a quantum well active layer provided over the first cladding layer, a second cladding layer provided over the quantum well active layer, and a first refractive index correction layer provided between the substrate and the first cladding layer. The first refractive index correction layer includes a layer of InAlGaN (where x+y<1), and x and y satisfy the relations x/1.05+y/0.69>1, x/1.13+y/0.49>1, or x/1.54+y/0.24>1, and the relations x/0.91+y/0.75≧1 and x/1.08+y/0.91≦1.