The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Sep. 23, 2014
Everdisplay Optronics (Shanghai) Limited, Shanghai, CN;
Yanhu Li, Shanghai, CN;
Xinzhi Lin, Shanghai, CN;
Bin Zhang, Shanghai, CN;
Guifang Li, Shanghai, CN;
EverDisplay Optronics (Shanghai) Limited, Shanghai, CN;
Abstract
An inverted top emitting device includes an TIO/Ag/ITO substrate, a cathode layer, an electron transport layer, an emissive layer, a hole transport layer, and an anode layer. The TIO/Ag/ITO substrate, the cathode layer, the electron transport layer, the emissive layer, the hole transport layer, and the anode layer are stacked in sequence. The cathode layer is made of cesium carbonate. The inverted top emitting device and its producing method provided by the present invention change the current structure of ITO/Ag/ITO/HTL/EML/ETL/Mg:Ag of the device to ITO/Ag/ITO/CsCO/ETL/EML/HTL/MoO/Ag. This avoids use of low work function metals, such as magnesium. Thus, even if the encapsulation is not satisfactory, the device is less likely to be oxidized by water and oxygen, providing the device with a longer service life.