The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Nov. 30, 2011
Applicants:

Atsushi Himeno, Osaka, JP;

Haruyuki Sorada, Okayama, JP;

Yukio Hayakawa, Kyoto, JP;

Takumi Mikawa, Shiga, JP;

Inventors:

Atsushi Himeno, Osaka, JP;

Haruyuki Sorada, Okayama, JP;

Yukio Hayakawa, Kyoto, JP;

Takumi Mikawa, Shiga, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/10 (2006.01); H01L 27/24 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/101 (2013.01); H01L 27/2409 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01); H01L 27/1052 (2013.01);
Abstract

A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.


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