The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Mar. 18, 2014
International Business Machines Corporation, Armonk, NY (US);
Anthony J. Annunziata, Stamford, CT (US);
Philip L. Trouilloud, Norwood, NJ (US);
Daniel C. Worledge, Cortlandt Manor, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A non-magnetic heating structure is formed of a barrier seed layer disposed on a buffer layer. A non-magnetic tunnel barrier is disposed on the barrier seed layer. A barrier cap layer is disposed on the non-magnetic tunnel barrier. A top buffer layer is disposed on the barrier cap layer. An antiferromagnetic layer is disposed on the top buffer layer of the non-magnetic heating structure. A magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a ferromagnetic storage layer disposed on the antiferromagnetic layer, a non-magnetic active tunnel barrier disposed on the ferromagnetic storage layer, and a ferromagnetic sense layer disposed on the non-magnetic active tunnel barrier.