The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Oct. 26, 2011
Applicants:
Sung-jin an, Gyeongbuk, KR;
Dong-gun Lee, Gyeongbuk, KR;
Seok-han Kim, Daegu, KR;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 21/36 (2006.01); H01L 29/06 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02104 (2013.01); H01L 21/02439 (2013.01); H01L 21/02444 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02499 (2013.01); H01L 21/02502 (2013.01); H01L 21/36 (2013.01); H01L 29/06 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); B82Y 40/00 (2013.01); Y10S 977/734 (2013.01);
Abstract
According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.