The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Oct. 29, 2012
Applicant:
Keiji Shimada, Osaka, JP;
Inventor:
Keiji Shimada, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, unknown;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 23/00 (2006.01); H01L 27/142 (2014.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 31/05 (2014.01); H01L 31/0443 (2014.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 23/562 (2013.01); H01L 27/1421 (2013.01); H01L 29/0649 (2013.01); H01L 29/417 (2013.01); H01L 29/66128 (2013.01); H01L 31/0443 (2014.12); H01L 31/0504 (2013.01); H01L 2924/0001 (2013.01); Y02E 10/50 (2013.01);
Abstract
A bypass diode includes a semiconductor substrate having a first surface and a second surface opposite to each other, a p electrode as a first conductive type electrode and an n electrode as a second conductive type electrode arranged on the first surface, a back surface electrode arranged on the second surface and having a polarity identical to that of the semiconductor substrate, a first oxide layer arranged on the first surface, and a second oxide layer arranged on the second surface.