The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Mar. 09, 2015
Applicant:
Nanya Technology Corp., Taoyuan, TW;
Inventor:
Shian-Jyh Lin, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORP., Gueishan Dist., Taoyuan, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 27/108 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/10891 (2013.01);
Abstract
A semiconductor device capable of reducing influences of adjacent word lines is provided in the present invention. The semiconductor device includes: a substrate, and a word line disposed in the substrate. The word line includes: a gate electrode, a gate dielectric layer disposed between the gate electrode and the substrate and at least one first charge trapping dielectric layer disposed adjacent to the gate electrode, wherein the first charge trapping dielectric layer comprises HfO, TiO, ZrO, a germanium nanocrystal layer, an organic charge trapping material, HfSiON, or MoSiON.