The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Dec. 12, 2013
Applicant:
The Hong Kong University of Science and Technology, Hong Kong, CN;
Inventors:
Hoi Sing Kwok, Hong Kong, CN;
Meng Zhang, Hong Kong, CN;
Shuming Chen, Hong Kong, CN;
Wei Zhou, Hong Kong, CN;
Man Wong, Hong Kong, CN;
Assignee:
The Hong Kong University of Science and Technology, Kowloon, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/6675 (2013.01); H01L 29/78675 (2013.01);
Abstract
A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary.