The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
May. 27, 2010
Shinji Imai, Kanagawa, JP;
Shinji Imai, Kanagawa, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
There is provided a method of manufacturing a field-effect transistor, in which on a electroconductive layer including a source electrode, a drain electrode and pixel electrode formed by a conductive layer-forming, an inorganic insulating layer containing an inorganic material as a main component is formed so as to cover the electroconductive layer and an oxide semiconductive layer, and after a photoresist film is formed on the inorganic insulating layer and is exposed in a pattern shape, a resist pattern is formed by being developed using a developer in development, and by removing the area exposed from the resist pattern in the inorganic insulating layer by using the developer as an etching liquid, a part of the electroconductive layer is exposed, thereby forming a contact hole; a field-effect transistor, a display device and an electromagnetic wave detector.