The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Feb. 10, 2014
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Masashi Hayashi, Osaka, JP;
Masao Uchida, Osaka, JP;
Abstract
A semiconductor device includes a silicon carbide semiconductor substrate, a silicon carbide layer, a switching element section, and an overvoltage detection element section whose area is smaller than that of the switching element section. The switching element section includes a first electrode pad, a first terminal section surrounding the first electrode pad and provided in the silicon carbide layer, and a first insulating film covering the first terminal section. The overvoltage detection element section includes a second electrode pad, a second terminal section surrounding the second electrode pad and provided in the silicon carbide layer, and a second insulating film covering the second terminal section and being in contact with the silicon carbide layer. A breakdown field strength of at least part of a portion of the second insulating film being in contact with the silicon carbide layer is lower than that of the first insulating film.