The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jan. 24, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Tadayoshi Miyamoto, Osaka, JP;
Kazuatsu Ito, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Mitsunobu Miyamoto, Osaka, JP;
Yasuyuki Ogawa, Osaka, JP;
Makoto Nakazawa, Osaka, JP;
Takuya Matsuo, Osaka, JP;
Seiichi Uchida, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This semiconductor device (A) includes: a substrate (); a gate electrode () formed on the substrate (); a gate insulating layer () formed over the gate electrode (); an oxide semiconductor layer () formed on the gate insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); a first transparent electrode () electrically connected to the drain electrode (); an interlayer insulating layer () including a dielectric layer () formed over the source and drain electrodes (); and a second transparent electrode () formed on the interlayer insulating layer (). At least a portion of the second transparent electrode () overlaps with the first transparent electrode () with the dielectric layer () interposed between them, and the oxide semiconductor layer () and the first transparent electrode () are formed out of the same oxide film.