The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Dec. 02, 2014
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Denso Corporation, Kariya-shi, Aichi-ken, JP;
Hidefumi Takaya, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
Sachiko Aoi, Nagoya, JP;
Atsuya Akiba, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes: a drift layer having a first conductivity type; a body layer having a second conductivity type; a first semiconductor region having the first conductivity type; a gate insulation film; a trench gate electrode; a first main electrode; a second semiconductor region having the second conductivity type; and a conductor region. The first main electrode is electrically connected with the body layer and the first semiconductor region. The second semiconductor region is disposed on a bottom part of the gate trench, and is surrounded by the drift layer. The conductor region is configured to electrically connect the first main electrode with the second semiconductor region and is configured to equalize, when the semiconductor device is in an off-state, a potential of the second semiconductor region and a potential of the first main electrode.