The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Dec. 19, 2013
Kunihito Kato, Nisshin, JP;
Toru Onishi, Nagoya, JP;
Kunihito Kato, Nisshin, JP;
Toru Onishi, Nagoya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor wafer, includes: a plurality of element regions; a surface electrode that is disposed in each of the plurality of element regions; an insulating layer that is disposed in each of the plurality of element regions and of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode in a periphery of the surface electrode; and a dicing line groove that is formed in a front side surface of the semiconductor wafer, that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; in which the insulating layer is formed with a communication passage that extends from a side of the surface electrode to the dicing line groove.