The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Feb. 02, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Shinichi Ushikura, Kanagawa, JP;
Akihiro Nomoto, Kanagawa, JP;
Ryouichi Yasuda, Kanagawa, JP;
Akira Yumoto, Kanagawa, JP;
Nobuhide Yoneya, Kanagawa, JP;
Shimpei Tsujikawa, Tokyo, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); H01L 27/28 (2006.01); H01L 33/00 (2010.01); H01L 29/786 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/283 (2013.01); H01L 29/786 (2013.01); H01L 33/0041 (2013.01); H01L 51/0097 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01);
Abstract
A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.