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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9214483 B1

PDFFull Text
Expired
Date of Patent:
Dec. 15, 2015

Filed:

Sep. 16, 2014

Thin-film-transistor array substrate and manufacturing method thereof

Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventor:

Tsunglung Chang, Shenzhen, CN;

Assignee:

SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;

Attorney:

Mark M. Friedman

Primary Examiner:

Mary Wilczewski

Assistant Examiner:

Tsz Chiu

Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/13 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 21/44 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 21/44 (2013.01); H01L 27/124 (2013.01); H01L 29/41733 (2013.01); H01L 29/78606 (2013.01); G02F 1/1368 (2013.01);
Abstract

The present invention discloses a thin-film-transistor array substrate and a manufacturing method thereof. The array substrate includes a thin-film transistor and a compensation electrode. A gate electrode of the thin-film transistor is a portion of a scan-signal line and has an opening, and the opening extends to a side of the scan-signal line. A drain electrode of the thin-film transistor is disposed correspondingly to the opening. A source electrode of the thin-film transistor extends from a side of a data-signal line and surrounds the drain electrode. The compensation electrode extends from another side of the scan-signal line and corresponds to the gate electrode. Therefore, the present invention is capable of reducing parasitic capacitance between the drain electrode and the gate electrode without increasing the resistance value of the scan-signal line.

Find Patent Forward Citations

Chang, Tsunglung. (2015). Thin-film-transistor array substrate and manufacturing method thereof (U.S. Patent No. 9214483). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9214483

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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