The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Dec. 28, 2012
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Yoshimitsu Yamauchi, Osaka, JP;
Sharp Kabushiki Kaisha Osaka, Osaka, JP;
Abstract
Provided is a semiconductor memory circuit including an oxide semiconductor insulated gate FET enabling advanced performance without being affected by a variation in threshold voltage. A semiconductor memory circuit MC includes a first transistor element Tcomposed of an insulated gate FET having a gate electrode connected to a memory node N, a drain electrode connected to an intermediate node N, and a source electrode connected to a data I/O terminal DIO; a second transistor element Tcomposed of an oxide semiconductor insulated gate FET having a gate electrode connected to a first control terminal CIN, a drain electrode connected to the intermediate node N, and a source electrode connected to the memory node N; a capacitive element Chaving one end connected to a first voltage terminal VINand the other end connected to the memory node N; and a switching element Sfor controlling a conducting state between a second control terminal CINor a second voltage terminal VINor the first voltage terminal VIN, and the intermediate node N, based on a voltage level of at least the second control terminal CIN