The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9214442 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 15, 2015

Filed:

Mar. 19, 2007
Applicants:

Karsten Guth, Soest, DE;

Holger Torwesten, Regensburg, DE;

Inventors:

Karsten Guth, Soest, DE;

Holger Torwesten, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); H01L 24/29 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/83 (2013.01); H01L 24/45 (2013.01); H01L 25/072 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/4554 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45647 (2013.01); H01L 2224/4846 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8381 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/1517 (2013.01); H01L 2924/15787 (2013.01);
Abstract

In a power semiconductor module, a copper-containing first soldering partner, a connection layer, and a copper-containing second soldering partner are arranged successively and fixedly connected with one another. The connection layer has a portion of intermetallic copper-tin phases of at least 90% by weight. For producing such a power semiconductor module the soldering partners and the solder arranged there between are pressed against one another with a predefined pressure and the solder is melted. After termination of a predefined period of time the diffused copper and the tin from the liquid solder form a connection layer comprising intermetallic copper-tin phases, the portion of which is at least 90% by weight of the connection layer created from the solder layer.


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