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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9214430 B1

PDFFull Text
Expired
Date of Patent:
Dec. 15, 2015

Filed:

Nov. 07, 2012

Semiconductor device and method for manufacturing semiconductor device

Applicant:

Yasushi Funakoshi, Osaka, JP;

Inventor:

Yasushi Funakoshi, Osaka, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Attorney:

Nixon & Vanderhye, P.C.

Primary Examiner:

Colleen A Matthews

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/00 (2006.01); H01L 23/544 (2006.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01); H01L 29/06 (2006.01); H01L 21/78 (2006.01); H01L 29/34 (2006.01); H01L 29/36 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); B24B 27/06 (2006.01); B28D 5/04 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); B24B 27/0633 (2013.01); B28D 5/045 (2013.01); H01L 21/2251 (2013.01); H01L 21/2254 (2013.01); H01L 21/304 (2013.01); H01L 21/78 (2013.01); H01L 29/0657 (2013.01); H01L 29/34 (2013.01); H01L 29/36 (2013.01); H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); H01L 2223/54473 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/547 (2013.01);
Abstract

Provided are a semiconductor device in which abrasive grain marks are formed in a surface of a semiconductor substrate, a dopant diffusion region has a portion extending in a direction which forms an angle included in a range of −5° to +5° with a direction in which the abrasive grain marks extend, and the dopant diffusion region is formed by diffusing a dopant from a doping paste placed on one surface of the semiconductor substrate; and a method for manufacturing the semiconductor device.

Find Patent Forward Citations

Funakoshi, Yasushi. (2015). Semiconductor device and method for manufacturing semiconductor device (U.S. Patent No. 9214430). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9214430

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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