The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Mar. 15, 2012
Applicant:
Hiroyuki Sazawa, Ibaraki, JP;
Inventor:
Hiroyuki Sazawa, Ibaraki, JP;
Assignee:
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/20 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 29/48 (2006.01); H01L 21/18 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/40 (2013.01); C30B 29/48 (2013.01); H01L 21/02381 (2013.01); H01L 21/02395 (2013.01); H01L 21/02441 (2013.01); H01L 21/02521 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01); H01L 21/187 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for producing a compound semiconductor crystal, includes; a sacrificial layer formation step of forming a sacrificial layer containing CSiGeSn(0≦x1<1, 0≦y1≦1, 0≦z1≦1, and 0<x1+y1+z1≦1), on a base wafer whose surface is made of a silicon crystal; a crystal formation step of forming, on the sacrificial layer, a compound semiconductor crystal lattice-matching or pseudo lattice-matching the sacrificial layer; and a crystal removal step of removing the compound semiconductor crystal from the base wafer, by etching the sacrificial layer.