The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Oct. 24, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
David Vaufrey, Grenoble, FR;
Hubert Bono, Grenoble, FR;
Abstract
Method for manufacturing at least one semiconductor structure () on the surface () of a substrate () wherein the surface comprises silicon. The method comprises steps consisting of providing the substrate (), forming in contact with an area () of the surface (), referred to as the formation area, a layer () of a first material, the remainder () of the surface (), referred to as the free area, remaining free from the first material, the dimensions of the formation area () and the first material being suitable for forming the structure (), the first material comprising gallium, the formation of said layer () taking place at a temperature less than 600° C., and forming the structure () in contact with the layer ().