The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Jul. 31, 2013
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Naoyuki Nakada, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
Abstract
The surface of a sapphire substrate having a c-plane main surface is patterned by ICP dry etching. The patterned sapphire substrate is thermally treated in a hydrogen or nitrogen atmosphere at a temperature of less than 700° C. or at a temperature of more than 800° C. to 1100° C. An AlN buffer layer is formed by magnetron sputtering on the surface on the patterned side of the sapphire substrate heated at a temperature of 200° C. to less than 700° C. On the buffer layer, a Group III nitride semiconductor layer having a c-plane main surface is formed so as to have a thickness of 1 μm to 10 μm by MOCVD.