The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2015

Filed:

Mar. 07, 2012
Applicant:

Haruki Toda, Yokohama, JP;

Inventor:

Haruki Toda, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 13/00 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0023 (2013.01); H01L 27/115 (2013.01); G11C 13/0011 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01);
Abstract

A semiconductor memory device including a memory cell array including a memory cell layer containing plural memory cells operative to store data in accordance with different resistance states; and an access circuit operative to make access to the memory cells, the memory cell changing the resistance state from a first resistance state to a second resistance state on application of a voltage of a first polarity, and changing the resistance state from the second resistance state to the first resistance state on application of a voltage of a second polarity, the access circuit applying voltages, required for access to the memory cell, to first and second lines connected to a selected memory cell, and bringing at least one of the first and second lines connected to non-selected memory cells into the floating state to make access to the selected memory cell.


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