The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Nov. 05, 2013
Qualcomm Incorporated, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Steven M. Millendorf, San Diego, CA (US);
Xu Guo, San Diego, CA (US);
David M. Jacobson, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
One feature pertains to a method of implementing a physically unclonable function (PUF). The method includes exposing an array of magnetoresistive random access memory (MRAM) cells to an orthogonal external magnetic field. The MRAM cells are each configured to represent one of a first logical state and a second logical state, and the orthogonal external magnetic field is oriented in an orthogonal direction to an easy axis of a free layer of the MRAM cells to place the MRAM cells in a neutral logical state that is not the first logical state or the second logical state. The method further includes removing the orthogonal external magnetic field to place each of the MRAM cells of the array randomly in either the first logical state or the second logical state.