The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2015
Filed:
Aug. 19, 2013
Infineon Technologies Ag, Neubiberg, DE;
Dieter Draxelmayr, Villach, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
In one implementation, an apparatus may include a first negative channel metal oxide semiconductor (NMOS) transistor circuit coupled to a first voltage source, a second NMOS transistor circuit coupled to the first voltage source, the second NMOS transistor circuit having a smaller channel width to channel length ratio than the first NMOS transistor circuit, a first positive channel metal oxide semiconductor (PMOS) transistor circuit coupled to a second voltage source and coupled to the second NMOS transistor circuit, and a second PMOS transistor circuit coupled to the second voltage source, the second PMOS transistor circuit having a larger channel width to channel length ratio than the first PMOS transistor circuit.