The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Mar. 23, 2012
Kouichi Yamada, Gifu-ken, JP;
Kouichi Yamada, Gifu-ken, JP;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A fourth n-channel MOSFET has a source terminal and a back-gate terminal connected to each other. A switch element is connected between the source terminal of the fourth n-channel MOSFET and a ground potential, and the source terminal of the fourth n-channel MOSFET is made become the ground potential when the fourth n-channel MOSFET is OFF. A protection circuit is provided between a connection node of the source terminal of the fourth n-channel MOSFET and an input terminal of the switch element, and the ground potential so that a negative inflow current from the drain terminal of the fourth n-channel MOSFET caused by electrostatic discharge flows to the ground potential.