The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Jun. 20, 2013
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Christian Rye Iversen, Vestbjerg, DK;

Marcus Granger-Jones, Scotts Valley, CA (US);

Assignee:

RF Micro Devices, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01); H01P 1/22 (2006.01); H03H 21/00 (2006.01); H03K 17/10 (2006.01);
U.S. Cl.
CPC ...
H03H 21/0007 (2013.01); H03K 17/102 (2013.01);
Abstract

Switchable capacitive elements are disclosed, along with programmable capacitor arrays (PCAs). One embodiment of the switchable capacitive element includes a field effect transistor (FET) device stack, a first capacitor, and a second capacitor. The FET device stack is operable in an open state and in a closed state and has a plurality of FET devices coupled in series to form the FET device stack. The first capacitor and the second capacitor are both coupled in series with the FET device stack. However, the first capacitor is coupled to a first end of the FET device stack while the second capacitor is coupled to a second end opposite the first end of the FET device stack. In this manner, the switchable capacitive element can be operated without a negative charge pump, with decreased bias swings, and with a better power performance.


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