The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Mar. 25, 2013
Applicant:

Evident Technologies, Inc., Troy, NY (US);

Inventors:

Adam Z. Peng, Guilderland, NY (US);

Susanthri Perera, Latham, NY (US);

Dave Socha, Glenmont, NY (US);

Clinton T. Ballinger, Ballston Spa, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/16 (2006.01); H01L 35/34 (2006.01); C01B 19/00 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 35/16 (2013.01); B82Y 30/00 (2013.01); C01B 19/007 (2013.01); H01L 35/34 (2013.01); C01P 2004/64 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01);
Abstract

Disclosed are a thermoelectric material and a method of forming a thermoelectric material having an optimal stoichiometry, the method including obtaining a first precursor material, wherein the first precursor material is an antimony precursor, and obtaining a second precursor material, wherein the second precursor is chosen from the group consisting of a tellurium precursor and a selenium precursor. The method further includes combining the precursor materials, heating the combination of precursor materials, and isolating a plurality of semiconductor nanocrystals from the heated precursor materials.


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