The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Jul. 04, 2012
Applicants:

Tony Maindron, Grenoble, FR;

Hani Kanaan, Saint Martin d'Heres, FR;

Inventors:

Tony Maindron, Grenoble, FR;

Hani Kanaan, Saint Martin d'Heres, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/52 (2010.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/52 (2013.01); H01L 51/0017 (2013.01); H01L 51/5221 (2013.01); H01L 51/5253 (2013.01); H01L 51/56 (2013.01); H01L 51/0003 (2013.01); H01L 2251/5315 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0<x<2.


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