The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Sep. 26, 2014
Panasonic Corporation, Osaka, JP;
Mitsuaki Oya, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Abstract
When a belt-like nitride semiconductor stacking structurehaving a principal plane of an m-plane is broken along a linear groove, two or more side surfaces may be formed on the lateral side thereof. This decreases the fabrication efficiency of the triangular prismatic m-plane nitride semiconductor light-emitting diode. To solve this problem, Angle X of not less than 75 degrees and not more than 105 degrees is formed between the linear grooveand one cleavage axis selected from the group consisting of an a-axis and a c-axis. Then, the belt-like nitride semiconductor stacking structurewas broken along the linear grooveto form a quadratic prismatic nitride semiconductor stacking structure. Subsequently, the quadratic prismatic nitride semiconductor stacking structureis broken along another linear grooveto obtain a triangular prismatic m-plane nitride semiconductor light-emitting diode