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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9209349 B1

PDFFull Text
Date of Patent:
Dec. 08, 2015

Filed:

Feb. 19, 2014

Method of fabricating nitride semiconductor light emitting device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kee Won Lee, Suwon-si, KR;

Jong Uk Seo, Suwon-si, KR;

Suk Ho Yoon, Seoul, KR;

Keon Hun Lee, Seoul, KR;

Sang Don Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02658 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01);
Abstract

A method of fabricating a nitride semiconductor light emitting device is provided. The method includes growing a first group-III-nitride semiconductor layer on a substrate, the first group-III-nitride semiconductor layer having a top surface formed as a group-III-rich surface exhibiting a group-III-polarity and a bottom surface formed as a N-rich surface exhibiting a N-polarity. The method further includes selectively etching a N-polarity region in the top surface of the first group III nitride semiconductor layer, forming a second group III nitride semiconductor layer on the first group III nitride semiconductor layer to fill the etched N-polarity region and forming a light emitting structure including first and second conductivity type nitride semiconductor layers and an active layer on the second group III nitride semiconductor layer.

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