The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Sep. 07, 2012
Applicants:
Sang-hun Jeon, Seoul, KR;
I-hun Song, Hwaseong-si, KR;
Seung-eon Ahn, Hwaseong-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/042 (2006.01); H01L 31/113 (2006.01); H01L 31/032 (2006.01); G01J 1/42 (2006.01); G01J 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); G01J 1/42 (2013.01); G06F 3/0421 (2013.01); H01L 31/032 (2013.01); G01J 2001/4473 (2013.01); G06F 2203/04103 (2013.01);
Abstract
Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.