The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jun. 21, 2013
Max-planck-gesellschaft Zur Forderung Der Wissenschaften E.v., Munich, DE;
Ljudmila Aseeva, Moscow, RU;
Masahiro Teshima, Unterschleissheim, DE;
Razmik Mirzoyan, Unterschleissheim, DE;
Boris Anatolievich Dolgoshein, Moscow, RU;
Pavel Zhorzhevich Buzhan, Moscow Region, RU;
Alexey Anatolievich Stifutkin, Moscow, RU;
Abstract
A cell for a silicon based photoelectric multiplier may comprise a substrate of a second conductivity type, a first layer of a first conductivity type, and/or a second layer of the second conductivity type formed on the first layer. The first layer and the second layer may form a first p-n junction, and the substrate may be configured such that in operation of the photoelectric multiplier from a quantity of light propagating towards a back side or side walls of the photoelectric multiplier, a negligible portion returns to a front side of the photoelectric multiplier.