The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Feb. 20, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Romain Esteve, Treffen am Ossiacher See, AT;
Cédric Ouvrard, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/085 (2006.01); H01L 29/808 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/0843 (2013.01); H01L 29/1066 (2013.01); H01L 29/41766 (2013.01); H01L 29/66909 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
A vertical junction field effect transistor (JFET) includes a drain, a source, a gate, a drift region, and a body diode. The source, gate, drift region, and body diode are all disposed in the same compound semiconductor epitaxial layer. The drain is vertically spaced apart from the source and the gate by the drift region. The body diode is connected between the drain and the source.