The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Mar. 02, 2012
Tomomasa Ueda, Kanagawa-ken, JO;
Shintaro Nakano, Kanagawa-ken, JP;
Nobuyoshi Saito, Kanagawa-ken, JP;
Yujiro Hara, Kanagawa-ken, JP;
Shuichi Uchikoga, Tokyo, JP;
Tomomasa Ueda, Kanagawa-ken, JO;
Shintaro Nakano, Kanagawa-ken, JP;
Nobuyoshi Saito, Kanagawa-ken, JP;
Yujiro Hara, Kanagawa-ken, JP;
Shuichi Uchikoga, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.