The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Nov. 08, 2012
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Xuehui Zhang, Beijing, CN;

Xiang Liu, Beijing, CN;

Jainshe Xue, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78678 (2013.01); H01L 27/124 (2013.01); H01L 27/1214 (2013.01); H01L 27/1259 (2013.01); H01L 27/1288 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 29/66765 (2013.01); H01L 29/78693 (2013.01); H01L 27/1225 (2013.01);
Abstract

There is provided a thin film transistor, comprising a substrate () and a gate layer (), a gate insulating layer (), an active layer (), an electrode metal layer () and a passivation layer () which are formed on the substrate () in sequence; the electrode metal layer () comprises a source electrode () and a drain electrode (), which are separated from each other with a channel region being defined therebetween; between the gate layer () and the substrate (), there is formed a first transparent conductive layer (); between the active layer () and the electrode metal layer (), there is formed a second transparent conductive layer (). The transparent conductive layers () are added so that adhesive force between the gate metal layer () and the substrate () is enhanced, diffusion of the electrode metal to the active layer () is prevented.


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