The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Nov. 12, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Toshitaka Miyata, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7391 (2013.01); H01L 29/66356 (2013.01); H01L 29/785 (2013.01);
Abstract

According to one embodiment, the pair of semiconductor regions are provided respectively on a pair of side walls of the second semiconductor layer having the fin configuration to form tunnel junctions with the second semiconductor layer. The gate electrode is provided on two sides of the second semiconductor layer at the pair of side walls to oppose the tunnel junctions with the semiconductor regions interposed between the gate electrode and the tunnel junctions. The third semiconductor layer is separated from the second semiconductor layer and the semiconductor regions by the first semiconductor layer to be adjacent to the first semiconductor layer.


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