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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9209282 B1

PDFFull Text
Date of Patent:
Dec. 08, 2015

Filed:

Jan. 16, 2013

Method of manufacturing thin film transistor substrate and thin film transistor substrate manufactured by the method

Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Kazuatsu Ito, Osaka, JP;

Hidehito Kitakado, Osaka, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka, JP;

Attorney:

Keating & Bennett, LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 21/477 (2006.01); H01L 29/417 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/02565 (2013.01); H01L 21/441 (2013.01); H01L 21/477 (2013.01); H01L 23/53238 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 2001/136295 (2013.01); H01L 29/41733 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention includes at least a step forming a source electrode () and a drain electrode (), each of which is a multilayer film of a first conductive film (), () made of titanium or molybdenum, a second conductive film (), () made of copper, and a third conductive film (), () made of titanium oxide, a step of forming passivation film (), which is an inorganic insulating film, on an oxide semiconductor layer (), the source electrode () and drain electrode (), and an annealing step of annealing the oxide semiconductor layer ().

Find Patent Forward Citations

Ito, Kazuatsu. (2015). Method of manufacturing thin film transistor substrate and thin film transistor substrate manufactured by the method (U.S. Patent No. 9209282). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9209282

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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