The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Nov. 26, 2014
Electronics and Telecommunications Research Institute, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Ho Kyun Ahn, Daejeon, KR;
Young Rak Park, Daejeon, KR;
Dong Min Kang, Daejeon, KR;
Woo Jin Chang, Daejeon, KR;
Seong-il Kim, Daejeon, KR;
Sung Bum Bae, Daejeon, KR;
Sang-Heung Lee, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Chull Won Ju, Daejeon, KR;
Jae Kyoung Mun, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film.