The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Dec. 18, 2012
Jae-joo Shim, Gyeonggi-do, KR;
Han-soo Kim, Gyeonggi-do, KR;
Woon-kyung Lee, Gyeonggi-do, KR;
Ju-young Lim, Seoul, KR;
Sung-min Hwang, Seoul, KR;
Jae-Joo Shim, Gyeonggi-do, KR;
Han-Soo Kim, Gyeonggi-do, KR;
Woon-Kyung Lee, Gyeonggi-do, KR;
Ju-Young Lim, Seoul, KR;
Sung-Min Hwang, Seoul, KR;
Abstract
Provided is a semiconductor device that includes first and second isolation patterns disposed on a substrate. Alternately stacked interlayer insulating patterns and a conductive patterns are disposed on a surface of the substrate between the first and second isolation patterns. A support pattern penetrates the conductive patterns and the interlayer insulating patterns and has a smaller width than the first and second isolation patterns. First and second vertical structures are disposed between the first isolation and the support pattern and penetrate the conductive patterns and the interlayer insulating patterns. A second vertical structure is disposed between the second isolation pattern and the support pattern and penetrates the conductive patterns and the interlayer insulating patterns. A distance between top and bottom surfaces of the support pattern is greater than a distance between a bottom surface of the support pattern and the surface of the substrate.