The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Oct. 18, 2013
International Business Machines Corporation, Armonk, NY (US);
Edward P. Maciejewski, Wappingers Falls, NY (US);
Chengwen Pei, Danbury, CT (US);
Gan Wang, Fishkill, NY (US);
Geng Wang, Stormville, NY (US);
GLOBALFOUNDRIES INC, Grand Cayman, KY;
Abstract
A method for forming a semiconductor device includes forming gate stacks on a crystalline semiconductor layer; depositing a spacer layer over a top and sidewalls of the gate stacks; recessing the semiconductor layer between the gates stacks; and depositing a non-conformal layer over the gates stacks and within the recesses such that the non-conformal layer forms a pinch point over the recesses. The non-conformal layer is etched at a bottom of the recesses through the pinch point to expose the semiconductor layer. Dopant species are implanted at the bottom of the recesses through the pinch point in the semiconductor layer. The non-conformal layer is stripped, and source and drain material is grown in the recesses. The dopant species are activated to form PN junctions to act as a junction butt between portions of the semiconductor layer.