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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9209171 B1

PDFFull Text
Date of Patent:
Dec. 08, 2015

Filed:

Jun. 20, 2011

Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device

Applicants:

Digh Hisamoto, Kokubunji, JP;

Shinichi Saito, Southampton, GB;

Akio Shima, Hino, JP;

Hiroyuki Yoshimoto, Tokyo, JP;

Inventors:

Digh Hisamoto, Kokubunji, JP;

Shinichi Saito, Southampton, GB;

Akio Shima, Hino, JP;

Hiroyuki Yoshimoto, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Miles & Stockbridge PC

Primary Examiner:

Thinh T Nguyen

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 21/84 (2006.01); H01L 27/07 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 27/115 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); G11C 16/04 (2006.01); H01L 27/102 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); G11C 16/0408 (2013.01); H01L 21/8249 (2013.01); H01L 21/84 (2013.01); H01L 27/0705 (2013.01); H01L 27/092 (2013.01); H01L 27/11 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 27/1203 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); G11C 11/412 (2013.01); H01L 27/1025 (2013.01); H01L 27/1026 (2013.01);
Abstract

Provided is a semiconductor element having, while maintaining the same integratability as a conventional MOSFET, excellent switch characteristics compared with the MOSFET, that is, having the S-value less than 60 mV/order at room temperature. Combining the MOSFET and a tunnel bipolar transistor having a tunnel junction configures a semiconductor element that shows an abrupt change in the drain current with respect to a change in the gate voltage (an S-value of less than 60 mV/order) even at a low voltage.

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