The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Jan. 21, 2014
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Shiqun Gu, San Diego, CA (US);

Ryan David Lane, San Diego, CA (US);

Urmi Ray, Ramona, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 21/76838 (2013.01); H01L 23/5389 (2013.01); H01L 28/10 (2013.01); H01L 23/5383 (2013.01); H01L 2224/11 (2013.01); H01L 2224/18 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, a first metal redistribution layer coupled to one of the metal layers, and a second metal redistribution layer coupled to the first metal redistribution layer. The first and second metal redistribution layers are configured to operate as a toroid inductor in the integrated device. In some implementations, the integrated device also includes a third metal redistribution layer. The third metal redistribution layer is coupled to the first and second metal redistribution layers. The third metal redistribution layer is a via. In some implementations, the first, second, and third metal redistribution layers are configured to operate as a toroid inductor in the integrated device. In some implementations, the first, second, and third redistribution layers form a set of windings for the toroid inductor.


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