The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Sep. 17, 2013
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Jenhao Cheng, Shanghai, CN;

Xining Wang, Shanghai, CN;

Ling Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 21/8222 (2006.01); H01L 23/522 (2006.01); H01L 23/552 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 23/5225 (2013.01); H01L 23/552 (2013.01); H01L 28/10 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor devices having a ground shield structure and methods for their formation are provided herein. An exemplary semiconductor device can include a substrate, a ground ring, a ground shield, an electronic device, and/or an insulation layer. The ground ring can be disposed over the substrate. The ground shield can be disposed over the substrate and surrounded by the ground ring. The ground shield can include a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction. The metal wire can be connected to the ground ring. The electronic device can be disposed over the ground shield. The insulation layer can be disposed between the ground shield and the electronic device.


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