The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Dec. 14, 2012
Applicant:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Hoojeong Lee, Suwon-si, KR;
Byunghoon Lee, Seoul, KR;
Assignee:
Research & Business Foundation SUNGKYUNKWAN UNIVERSITY, Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 21/4853 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/16 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11464 (2013.01); H01L 2224/13005 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16507 (2013.01); H01L 2225/06513 (2013.01);
Abstract
Provided herein is a bump including a diffusion barrier bi-layer, the bump having: a conductive layer; a first diffusion barrier layer formed on or above the conductive layer, and comprising an alloy of nickel and phosphorus; a second diffusion barrier formed on or above the first diffusion barrier layer, and comprising copper; and a solder layer formed on or above the second diffusion barrier layer. A manufacturing method for producing a bump is also provided.