The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Feb. 21, 2013
Applicants:

Gerhard Traunspurger, Berchtesgaden, DE (US);

Laszlo Fabry, Burghausen, DE (US);

Reiner Pech, Neuoetting, DE (US);

Inventors:

Gerhard Traunspurger, Berchtesgaden, DE (US);

Laszlo Fabry, Burghausen, DE (US);

Reiner Pech, Neuoetting, DE (US);

Assignee:

Wacker Chemie AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/02 (2006.01); H01L 21/02 (2006.01); C01B 33/037 (2006.01); C30B 11/00 (2006.01); C30B 13/00 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02046 (2013.01); C01B 33/02 (2013.01); C01B 33/037 (2013.01); C30B 11/00 (2013.01); C30B 13/00 (2013.01); C30B 15/00 (2013.01); C30B 29/06 (2013.01); C01P 2002/88 (2013.01); C01P 2002/89 (2013.01); C01P 2002/90 (2013.01); C01P 2006/80 (2013.01);
Abstract

The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.


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