The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Aug. 27, 2013
Applicant:
Sen Corporation, Tokyo, JP;
Inventor:
Masateru Sato, Ehime, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 1/20 (2006.01); H01J 5/10 (2006.01); H01J 27/08 (2006.01);
U.S. Cl.
CPC ...
H01J 5/10 (2013.01); H01J 27/08 (2013.01); H01J 37/08 (2013.01); H01J 2237/082 (2013.01); H01J 2237/31701 (2013.01);
Abstract
An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.