The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jan. 24, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kwang-Woo Lee, Hwaseong-si, KR;
Daewon Ha, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/56 (2013.01); G11C 11/5678 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 13/0061 (2013.01); G11C 13/0064 (2013.01);
Abstract
A writing method of a nonvolatile memory device is provided which receiving data, a target time, and a target resistance value; writing the data at a memory cell; calculating a resistance drift coefficient based on resistance values of the memory cell read on at least two times; calculating a resistance value of the memory cell on the target time using the resistance drift coefficient; and determining whether the resistance value calculated satisfies the target resistance value.