The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Nov. 19, 2013
Applicants:

Yong-kyu Lee, Hwaseong-Si, KR;

Bo-geun Kim, Suwon-Si, KR;

Inventors:

Yong-Kyu Lee, Hwaseong-Si, KR;

Bo-Geun Kim, Suwon-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0064 (2013.01); G11C 11/5678 (2013.01); G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0076 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/0085 (2013.01); G11C 2211/5622 (2013.01); G11C 2213/72 (2013.01);
Abstract

A method is provided for driving a nonvolatile memory device. The method includes selecting first write drivers based on a predetermined current, performing a first program operation on resistive memory cells corresponding to the first write drivers, verifying whether the resistive memory cells have passed or failed in the first program operation and sorting information regarding failed bit memory cells that failed in the first program operation, selecting second write drivers based on the sorted failed bit memory cell information, and performing a second program operation on resistive memory cells corresponding to the second write drivers.


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