The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Sep. 22, 2011
Applicants:

Hiroko Nakamura, Yokohama, JP;

Koji Asakawa, Kawasaki, JP;

Shigeki Hattori, Yokohama, JP;

Satoshi Tanaka, Kawasaki, JP;

Toshiya Kotani, Machida, JP;

Inventors:

Hiroko Nakamura, Yokohama, JP;

Koji Asakawa, Kawasaki, JP;

Shigeki Hattori, Yokohama, JP;

Satoshi Tanaka, Kawasaki, JP;

Toshiya Kotani, Machida, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); G03F 7/00 (2006.01); B81C 1/00 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); B81C 1/00031 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); B81C 2201/0149 (2013.01);
Abstract

According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.


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